By Topic

An analog front-end circuit with dual-directional SCR ESD protection for UHF-band passive RFID tag

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Ming-Hsien Tsai ; Dept. of Electrical Engineering and Institute of Electronics Engineering, National Tsing, Hua University, Hsinchu, Taiwan ; Shawn S. H. Hsu ; Fu-Lung Hsueh ; Chewn-Pu Jou
more authors

In this study, we demonstrate an analog front-end (AFE) circuit with ESD protection for a passive RFID tag at UHF-band (860~960 MHz) in a 0.18-μm CMOS technology. A dual-directional silicon-controlled-rectifier (dual-SCR) structure is proposed for the ESD protection under the large-signal operation at the RFID input. With the well-designed dual-SCR, a large trigger voltage (VT) of ~16.9 V is obtained. The parasitic capacitance of the ESD block is only ~34 fF, which has virtually no impact on the core circuits at the frequency of interest. The measured ESD levels achieve 3.0-kV human-body-mode (HBM) and 200-V machine-mode (MM), respectively. The RF-DC rectifier in the RFID circuit can generate a stable power supply output about 1.2 V when the RF input power exceeds -7.5 dBm.

Published in:

2011 IEEE International Conference on RFID

Date of Conference:

12-14 April 2011