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Off-State Degradation of High-Voltage-Tolerant nLDMOS-SCR ESD Devices

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8 Author(s)
Griffoni, A. ; Interuniversity Microelectron. Center, Leuven, Belgium ; Shih-Hung Chen ; Thijs, S. ; Kaczer, B.
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The OFF-state degradation of n-channel laterally diffused metal-oxide-semiconductor (MOS) silicon-controlled-rectifier electrostatic-discharge (ESD) devices for high-voltage applications in standard low-voltage complementary MOS technology is studied. Based on experimental data and technology computer-aided design simulations, impact ionization induced by conduction-band electrons tunneling from an n+ poly-Si gate to an n-well is identified to be the driving force of device degradation. Device optimization is proposed, which improves both OFF-state and ESD reliability.

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Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 7 )