A Q-band common source low noise amplifier using 90-nm RF CMOS process

In this paper, a Q-band common source low noise amplifier (LNA) using 90-nm standard RF-CMOS technology is proposed. The design methodologies for millimeter-wave (MMW) amplifiers are discussed. The post layout simulation results show that S₁₁ is lower than -14 dB and S₂₂ is -11 dB at the peak gain of 14.6 dB at 37.5 GHz with 9.4 GHz bandwidth, the minimum noise figure is lower than 5.5 dB, the input P_1dB and IIP3 are -15.2 dBm and -6.9 dBm, respectively. The whole circuit draws a DC current of 14 mA from one 1.2 V supply and occupies a layout area of 755 μm × 670 μm.