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A Q-band common source low noise amplifier using 90-nm RF CMOS process

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4 Author(s)
Geliang Yang ; Inst. of RF- & OE-ICs, Southeast Univ., Nanjing, China ; Zhigong Wang ; Li Qin ; Keping Wang

In this paper, a Q-band common source low noise amplifier (LNA) using 90-nm standard RF-CMOS technology is proposed. The design methodologies for millimeter-wave (MMW) amplifiers are discussed. The post layout simulation results show that S11 is lower than -14 dB and S22 is -11 dB at the peak gain of 14.6 dB at 37.5 GHz with 9.4 GHz bandwidth, the minimum noise figure is lower than 5.5 dB, the input P1dB and IIP3 are -15.2 dBm and -6.9 dBm, respectively. The whole circuit draws a DC current of 14 mA from one 1.2 V supply and occupies a layout area of 755 μm × 670 μm.

Published in:

Computer Research and Development (ICCRD), 2011 3rd International Conference on  (Volume:3 )

Date of Conference:

11-13 March 2011