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100 GHZ integrated CMOS passive imager with >100 MV/W responsivity, 23fW/ √HZ NEP

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7 Author(s)
Gu, Q.J. ; Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA ; Xu, Z. ; Jian, H.-Y. ; Tang, A.
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Presented is a 100 GHz fully differential CMOS passive imager for system-on-chip integration, which features high gain, high sensitivity and high resilience to flicker noise and gain variation. It integrates a low-noise amplifier, a Dicke switch, a detector and a baseband programmable gain amplifier in a single chip, and achieves the best noise equivalent power (NEP) (23fW /√(Hz)/26fW /√(Hz) for without/with Dicke switch) in CMOS, the highest responsivity (>;100 MV/W) in silicon. It also demonstrates 1.96 K noise-equivalent temperature difference in 30 ms integration time.

Published in:

Electronics Letters  (Volume:47 ,  Issue: 9 )