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In this work we investigated a new method of growing detector grade large GaTe layered chalcogenide single crystals. GaTe ingots (2" diameter) were grown by a novel method using graphite crucible by slow crystallization from a melt of high purity (7 N) Ga and zone refined (ZR) Te precursors in an argon atmosphere. GaTe samples from the monocrystalline area of the ingot have been cleaved mechanically and characterized using x-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive analysis by x-rays (EDX), atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), transfer length method (TLM), resistivity measurements using van der Pauw technique, Hall effect, and capacitance-voltage (C-V) measurements. Our investigations reveal a novel method of growing superior quality GaTe crystals for large volume inexpensive nuclear radiation detectors.