By Topic

Layered GaTe Crystals for Radiation Detectors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Mandal, K.C. ; Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA ; Krishna, R.M. ; Hayes, T.C. ; Muzykov, P.G.
more authors

In this work we investigated a new method of growing detector grade large GaTe layered chalcogenide single crystals. GaTe ingots (2" diameter) were grown by a novel method using graphite crucible by slow crystallization from a melt of high purity (7 N) Ga and zone refined (ZR) Te precursors in an argon atmosphere. GaTe samples from the monocrystalline area of the ingot have been cleaved mechanically and characterized using x-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive analysis by x-rays (EDX), atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), transfer length method (TLM), resistivity measurements using van der Pauw technique, Hall effect, and capacitance-voltage (C-V) measurements. Our investigations reveal a novel method of growing superior quality GaTe crystals for large volume inexpensive nuclear radiation detectors.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:58 ,  Issue: 4 )