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Electronic structure of GaInN semiconductors investigated by x-ray absorption spectroscopy

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12 Author(s)
Guo, Q.X. ; Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, Japan ; Senda, H. ; Saito, K. ; Tanaka, T.
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We have investigated the electronic structure of GaInN semiconductors by performing x-ray absorption near-edge fine structure (XANES) spectroscopy at Ga K-edge and self-consistent-field real-space multiple-scattering theory calculations. It was demonstrated that the nondestructive Ga K-edge XANES spectra can be used as the fingerprints of structure and composition for GaInN. The theoretical calculations gave a reasonable reproduction of the experimental spectral features. The results revealed that the combination of the experimental XANES and the theoretical calculations is a powerful tool for studying the electronic structure of GaInN semiconductors.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 18 )

Date of Publication:

May 2011

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