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Enhancement of Resistive Switching Characteristics in  \hbox {Al}_{2}\hbox {O}_{3} -Based RRAM With Embedded Ruthenium Nanocrystals

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8 Author(s)
Lin Chen ; Dept. of Microelectron., Fudan Univ., Shanghai, China ; Hong-Yan Gou ; Qing-Qing Sun ; Zhou, Peng
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Resistive switching behaviors of Al2O3-based memory devices with and without ruthenium nanocrystals (RuNCs) fabricated by atomic layer deposition are investigated for nonvolatile-memory applications. Large resistance ratios (>; 105) of high- to low-resistance states were observed with nanocrystals contribution. Moreover, improvements of stability device yield and retention performance were also achieved by embedding RuNCs. Therefore, the Al2O3-based resistive memory device composed of embedded nanocrystals is a possible solution for future integrated standalone storage class memory processes.

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Electron Device Letters, IEEE  (Volume:32 ,  Issue: 6 )