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Effect of Oxygen Plasma Treatment on Characteristics of TiO _{2} Photodetectors

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6 Author(s)
Shih, W.S. ; Inst. of Electro-Opt. & Mater. Sci., Nat. Formosa Univ., Yunlin, Taiwan ; Young, S.J. ; Ji, L.W. ; Water, W.
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In this study, titanium dioxide (TiO2) films were prepared on Corning glass substrates by radio frequency (RF) magnetron sputtering and treated with different O2 plasma conditions, and then were used to fabricate metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs). The effects of the changes on TiO2 films were investigated by using field-emission scanning electron microscope (FE-SEM), photoluminescence (PL) system and four-point probe measurement. With a 360-nm illumination and 5 V applied bias, it was found that the responsivities of the fabricated TiO2 PDs with 0, 1, 2, and 3 min O2 plasma treatment were 36, 144, 153, and 53 A/W, respectively.

Published in:

Sensors Journal, IEEE  (Volume:11 ,  Issue: 11 )

Date of Publication:

Nov. 2011

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