Cart (Loading....) | Create Account
Close category search window

Time-Dependent Dielectric Breakdown and Stress-Induced Leakage Current Characteristics of 0.7-nm-EOT \hbox {HfO}_{2} pFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
O'Connor, R. ; IMEC, Leuven, Belgium ; Hughes, Greg ; Kauerauf, T.

In this paper, we examine the time-dependent dielectric breakdown (TDDB) reliability of p-type field-effect transistor devices with 0.7-nm-equivalent-oxide-thickness HfO2 gate dielectric layers. The TDDB distributions indicate ten-year lifetime with operating voltages in excess of 1 V. The reason for this high reliability lies in the high Weibull slopes (~1.2) of the measured TDDB distributions. In order to understand the mechanism behind the high Weibull slope, a detailed study of the defect generation by stress-induced leakage current (SILC) measurements is presented. The layers show different defect generation behavior as a function of temperature where the SILC generation rate at high temperature is stress voltage dependent.

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:11 ,  Issue: 2 )

Date of Publication:

June 2011

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.