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Multideposition Multiroom-Temperature Annealing via Ultraviolet Ozone for HfZrO High- \kappa and Integration With a TiN Metal Gate in a Gate-Last Process

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6 Author(s)
Ling Wu ; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore ; HongYu Yu ; K. S. Yew ; Jisheng Pan
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In this brief, high-κ HfZrO (via atomic layer deposition) fabricated by a novel multideposition multiroom-temperature annealing (MDMA) technique in ultraviolet-ozone (UVO) ambient is systematically investigated by both electrical and physical characterization and is integrated with a TiN metal gate in a gate-last process. Compared with the conventional rapid-thermal-annealed sample, it is found that the device annealed via MDMA in UVO demonstrates the following: 1) more than one order of leakage current reduction at 25°C and 125°C without an equivalent oxide thickness penalty; 2) less susceptibility to stress-induced degradation; and 3) improved time-dependent dielectric-breakdown lifetime. Grain boundary suppression and healing of oxygen vacancies are believed to be responsible for the improvement, as evidenced by scanning tunneling microscopy and X-ray photoelectron spectroscopy analysis.

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IEEE Transactions on Electron Devices  (Volume:58 ,  Issue: 7 )