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Our previous research has reported on the development of the first generation of quantum dots-in-a-well (DWELL) focal plane arrays (FPAs), which are based on InAs quantum dots (QDs) embedded in an InGaAs well having GaAs barriers, which have demonstrated spectral tunability via an externally applied bias voltage. More recently, technologies in DWELL devices have been further advanced by embedding InAs QDs in InGaAs and GaAs double wells with AlGaAs barriers, leading to a less strained InAs/InGaAs/GaAs/AlGaAs heterostructure. These lower strain quantum dots-in-a-double-well devices exhibit lower dark current than the previous generation DWELL devices while still demonstrating spectral tunability. This paper compares two different configurations of double DWELL (DDWELL) FPAs to a previous generation DWELL detector and to a commercially available quantum well infrared photodetector (QWIP). All four devices are 320 × 256 pixel FPAs that have been fabricated and hybridized with an Indigo 9705 read-out integrated circuit. Radiometric characterization, average array responsivity, array uniformity and measured noise equivalent temperature difference for all four devices is computed and compared at 60 K. Overall, the DDWELL devices had lower noise equivalent temperature difference and higher uniformity than the first-generation DWELL devices, although the commercially available QWIP has demonstrated the best performance.