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Low Phase Noise and Low Power Consumption VCOs Using CMOS and IPD Technologies

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6 Author(s)
Yuan-Chia Hsu ; Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan ; Hwann-Kaeo Chiou ; Hsien-Ku Chen ; Ta-Yeh Lin
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This paper presents two voltage controlled oscillators (VCOs) operating at 5.42 and 5.76 GHz implemented in 0.18-μm complementary metal-oxide semiconductor (CMOS) technology with integrated passive device (IPD) inductors. One IPD inductor was stacked on the top of the active region of the 5.76-GHz VCO chip, whereas the other IPD inductor was placed on the top of the 5.42-GHz VCO CMOS chip but far from the its active region. The high-quality IPD inductors reduce the phase noise of the VCOs. The measurements of the two VCOs indicate the same phase noise of -120 dBc/Hz at 1 MHz offset frequency. These results demonstrate a 6-dB improvement compared to the VCO using an on-chip inductor. This paper also presents the effect of the coupling between the IPD inductor and the active region of the chip on the phase noise performance.

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Components, Packaging and Manufacturing Technology, IEEE Transactions on  (Volume:1 ,  Issue: 5 )