Referenced Items are not available for this document.
The quantum confined Stark effect in GaInAsSb/AlGaAsSb strain compensated multiquantum well structures grown by molecular beam epitaxy on GaSb substrates has been successfully demonstrated for the first time. A large absorption peak shift up to 80 nm was observed. The excitonic absorption peak shifts agree well with the calculated results
Published in:
Electronics Letters
(Volume:33
,
Issue:
3
)
Date of Publication: 30 Jan 1997
- Page(s):
- 248 - 250
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 5515335
- Digital Object Identifier :
- 10.1049/el:19970141
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 30 Jan 1997
- Sponsored by :
- Institution of Engineering and Technology
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