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Quantum confined Stark effect in GaInAsSb/AlGaAsSb quantum wells grown by molecular beam epitaxy

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5 Author(s)
Shi, Y. ; Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA ; Zhao, J.H. ; Sarathy, J. ; Olsen, G.
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The quantum confined Stark effect in GaInAsSb/AlGaAsSb strain compensated multiquantum well structures grown by molecular beam epitaxy on GaSb substrates has been successfully demonstrated for the first time. A large absorption peak shift up to 80 nm was observed. The excitonic absorption peak shifts agree well with the calculated results

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Electronics Letters  (Volume:33 ,  Issue: 3 )