Referenced Items are not available for this document.
The potential and electric field boundary conditions for the Gouy-Chapman model of the electrolyte diffuse layer are used to properly couple the potentials in the silicon-on-insulator-based metal-oxide-semiconductor field-effect transistor to the electrolyte. This analysis is possible because the active silicon channel is fully depleted. Both the subthreshold and linear regimes are simulated. An operation with electrolyte floating and bias applied to the substrate is compared with the other methods of biasing the sensor.
Published in:
Electron Devices, IEEE Transactions on
(Volume:58
,
Issue:
6
)
Date of Publication: June 2011
- Page(s):
- 1752 - 1760
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 12006978
- Digital Object Identifier :
- 10.1109/TED.2011.2132134
- Product Type:
- Journals & Magazines
- Date of Publication :
- 29 April 2011
- Date of Current Version :
- 19 May 2011
- Issue Date :
- June 2011
- Sponsored by :
- IEEE Electron Devices Society
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