Referenced Items are not available for this document.
In this study, a GaN-based light-emitting diode (LED) with a distributed Bragg reflector (DBR) current blocking layer (CBL) beneath the p-pad electrode is demonstrated. A high reflectivity DBR structure is composed of five periods SiO2 and TiO2 layers. At a driving current of 20 mA, the light output power of the LEDs with DBR CBL was 16.8% and 11.3% higher than the LEDs without and with SiO2 CBL. The improvement is contributed to the DBR CBL can deflect the current away from the p-electrode pad and also prevent the light absorption by the opaque metal electrode. It was found that LEDs with DBR CBL shows better current spreading and broader far-field pattern.
Published in:
Photonics Technology Letters, IEEE
(Volume:23
,
Issue:
14
)
Date of Publication: July15, 2011
- Page(s):
- 986 - 988
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 12068864
- Digital Object Identifier :
- 10.1109/LPT.2011.2148707
- Product Type:
- Journals & Magazines
- Date of Publication :
- 29 April 2011
- Date of Current Version :
- 23 June 2011
- Issue Date :
- July15, 2011
- Sponsored by :
- IEEE Photonics Society
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