Cart (Loading....) | Create Account
Close category search window

Anomalous temperature-dependency of phonon line widths probed by Raman scattering from β-FeSi2 thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Liu, H.F. ; Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602, Singapore ; Huang, A. ; Chi, D.Z.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Micro-Raman scattering and its temperature dependencies have been used to investigate lattice dynamic properties of β-FeSi2 thin films epitaxially grown on Si (111) substrates by sputtering at elevated temperatures. A linear correlation between the blueshift in phonon energies and the lattice expansions in the growth direction of β-FeSi2 is observed. The shifting rate of the Raman mode at 248 cm-1 (13.6 cm-1/%) is much larger than that of the mode at 194 cm-1 (8.4 cm-1/%) due to the involvement of radial bonding vibrations between Fe and Si atoms. Temperature-dependent Raman scattering, which is hitherto unknown for β-FeSi2, reveals an extremely small phonon line width broadening in the range of 80-480 K. It is revealed that the broadening in the phonon line widths contributed by phonon-phonon scattering is weaker and is masked by phonon-hole couplings in β-FeSi2, while the effect of phonon-hole coupling on phonon line width broadening is saturated at the studied temperatures due to the high impurity densities.

Published in:

Journal of Applied Physics  (Volume:109 ,  Issue: 8 )

Date of Publication:

Apr 2011

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.