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Anomalous temperature-dependency of phonon line widths probed by Raman scattering from β-FeSi2 thin films

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3 Author(s)
Liu, H.F. ; Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602, Singapore ; Huang, A. ; Chi, D.Z.

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Micro-Raman scattering and its temperature dependencies have been used to investigate lattice dynamic properties of β-FeSi2 thin films epitaxially grown on Si (111) substrates by sputtering at elevated temperatures. A linear correlation between the blueshift in phonon energies and the lattice expansions in the growth direction of β-FeSi2 is observed. The shifting rate of the Raman mode at 248 cm-1 (13.6 cm-1/%) is much larger than that of the mode at 194 cm-1 (8.4 cm-1/%) due to the involvement of radial bonding vibrations between Fe and Si atoms. Temperature-dependent Raman scattering, which is hitherto unknown for β-FeSi2, reveals an extremely small phonon line width broadening in the range of 80-480 K. It is revealed that the broadening in the phonon line widths contributed by phonon-phonon scattering is weaker and is masked by phonon-hole couplings in β-FeSi2, while the effect of phonon-hole coupling on phonon line width broadening is saturated at the studied temperatures due to the high impurity densities.

Published in:

Journal of Applied Physics  (Volume:109 ,  Issue: 8 )

Date of Publication:

Apr 2011

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