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2D Analysis of source/drain carrier tunneling in lightly doped Schottky barrier DG-MOSFETs using a fully analytical model

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4 Author(s)
Schwarz, M. ; Univ. of Appl. Sci. Giessen-Friedberg, Giessen, Germany ; Holtij, T. ; Kloes, A. ; Iñíguez, B.

A new approach to estimate the tunneling current in SB-DG-MOSFETs by applying 2D analytical solutions for the electric field and the electrostatic potential is used to analyze the current contribution. Here, the main focus on the tunneling current. 2D analysis shows a two dimensional influence on the tunneling current, which tunneling probabilty is estimated with the Wentzel-Kramers-Brillouin (WKB) approximation. Thermionic emission is calculated as well with the 2D analytical solutions. A comparison of the tunneling and thermionic current with TCAD Sentaurus was made for channel lengths down to 65nm.

Published in:

Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on

Date of Conference:

14-16 March 2011