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Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors

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9 Author(s)
Schmidt, M. ; Peter-Grunberg-Inst. (PGI 9-IT), JARA-FIT Forschungszentrum, Julich, Germany ; Minamisawa, R.A. ; Richter, S. ; Hartmann, J.-M.
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Compressively strained Si1-xGex band-to-band tunneling field effect transistors with planar structure and HfO2/TiN gate stack have been produced and analyzed, with different Germanium concentrations of x = 0.35, 0.50 and 0.65. Simulations using a nonlocal band-to-band-tunneling model have been carried out to understand the switching behavior and its dependence on the material parameters. One would expect an increase of the tunneling currents for the increase of x. However, the Si0.5Ge0.5 devices show the highest Ion and smallest S, whereas Si0.35Ge0.65 devices exhibit decreased currents due to partial strain relaxation.

Published in:

Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on

Date of Conference:

14-16 March 2011