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A surface potential based compact model for lightly doped FD SOI MOSFETs with ultra-thin body

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7 Author(s)
Husseini, J.E. ; IES, Montpellier Univ., Montpellier, France ; Martinez, F. ; Bawedin, M. ; Valenza, M.
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In this paper, a new surface potential based compact model for long channel fully depleted SOI MOSFET with lightly doped ultra-thin body is presented. The 1-D Poisson equation is solved using the appropriate boundary conditions, and a closed-form surface potential solution is proposed for the front and back surface potentials. Finally the model was compared to numerical simulations and a good agreement is observed.

Published in:

Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on

Date of Conference:

14-16 March 2011

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