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AlGaAs/GaAs HBT current gain instability: Physical mechanism and SPICE simulation

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3 Author(s)
Liou, J.J. ; Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA ; Sheu, S. ; Huang, C.I.

The current gain instability of AlGaAs/GaAs heterojunction bipolar transistor (HBT) is investigated, and a new AlGaAs/GaAs HBT model for SPICE circuit simulation is presented. Such a model includes the effects of base and collector leakage currents and the stress-induced abnormal base current, thus allowing the simulation of the performance of HBT circuits subjected to the electrical/thermal stress test (i.e., burn-in test)

Published in:

High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, 1996. EDMO

Date of Conference:

25-26 Nov 1996