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Aggressively Scaled Strained-Silicon-on-Insulator Undoped-Body High- \kappa /Metal-Gate nFinFETs for High-Performance Logic Applications

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18 Author(s)
Maitra, K. ; Globalfoundries Inc., Albany, NY, USA ; Khakifirooz, A. ; Kulkarni, P. ; Basker, V.S.
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Strained-silicon-on-insulator (SSOI) undoped-body high-κ /metal-gate n-channel fin-shaped field-effect transistors (nFinFETs) at scaled gate lengths and pitches (i.e.,LGATE ~ 25 nm and a contacted gate pitch of 130 nm) were fabricated using a gate-first flow. A “long and narrow” fin layout (i.e., fin length ~ 1 μm) was leveraged to preserve uniaxial tensile strain in the transistors. These devices exhibit drive currents suitable for high-performance logic technology. The change in the slope of RON - LGATE (dRON/dLGATE), transconductance GMSAT, and injection velocity (vinj) measurements indicate a ~ 15% mobility-induced ION enhancement with SSOI relative to SOI nFinFETs at ultrashort gate lengths. Raman measurements conducted on SSOI substrates after fin formation demonstrate the preservation of ~ 1.3-GPa uniaxial tensile strain even after 1100°C annealing.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 6 )

Date of Publication:

June 2011

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