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Stepped Broken-Gap Heterobarrier Tunneling Field-Effect Transistor for Ultralow Power and High Speed

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3 Author(s)
Register, L.F. ; Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA ; Hasan, M.M. ; Banerjee, Sanjay K.

The concept and the simulated device characteristics of ultralow-power and high-performance band-to-band tunneling field-effect transistors employing stepped broken-gap heterobarriers, HetTFETs, are presented. Abrupt switching is defined by the onset of a band overlap. High on-state currents are provided by narrow tunnel barriers defined by crystal growth rather than electrostatics. Sentaurus Device simulations exhibit current roll-offs by approximately 106 over ranges of ~ 15 meV down to a few millielectronvolts, depending on the prototype device structure, and approximately constant above-threshold transconductance values approaching current CMOS-like values.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 6 )