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Influence of the alignment of ZnO nanorod arrays on light extraction enhancement of GaN-based light-emitting diodes

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5 Author(s)
Dai, Kehui ; Division of Optoelectronic Devices and Integration, Wuhan National Laboratory for Optoelectronics, Wuhan 430074, China and Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576, Singapore ; Soh, Chew Beng ; Chua, Soo Jin ; Wang, Lianshan
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ZnO nanorod arrays (ZNAs) were hydrothermally synthesized on the surface of patterned indium-doped tin oxide p-type contact (PIPC) of GaN-based light-emitting diodes (GaN-LEDs) for enhancing the light extraction efficiency (LEE). It was found that the alignment of the ZnO nanorod arrays in the grooves of the PIPC was poorer than these grown on the ridges of the PIPC. By comparing the light output of the GaN-LEDs with and without ZNAs grown in the grooves of PIPC, the influence of the alignment of ZNAs on the LEE of GaN-LEDs was revealed and investigated. Numerical analysis based on the finite difference of time domain (FDTD) method suggested that the poorer alignment of ZNAs grown on GaN-LEDs resulted in more energy reflected back into GaN-LEDs and lower light extraction efficiency.

Published in:

Journal of Applied Physics  (Volume:109 ,  Issue: 8 )