By Topic

An accurately scaled small-signal model for interdigitated power P-HEMT up to 50 GHz

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Shen-Whan Chen ; IC Bus. Unit, Millimeter IC Product, Clarksburg, MD, USA ; Aina, O. ; Weiqi Li ; Phelps, L.
more authors

In this paper, the authors report an approach for constructing scalable small-signal models for interdigitated power pseudomorphic high-electron-mobility transistors (P-HEMTs). By using cold-FET and Yang-Long measurement, as well as direct extraction procedures, scaling rules for extrinsic components were established that allow accurate models over a broad frequency range. These models have been used to design ultrawide-band monolithic microwave integrated circuits (MMICs) up to 50 GHz

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:45 ,  Issue: 5 )