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An accurately scaled small-signal model for interdigitated power P-HEMT up to 50 GHz

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5 Author(s)
Shen-Whan Chen ; IC Bus. Unit, Millimeter IC Product, Clarksburg, MD, USA ; O. Aina ; Weiqi Li ; L. Phelps
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In this paper, the authors report an approach for constructing scalable small-signal models for interdigitated power pseudomorphic high-electron-mobility transistors (P-HEMTs). By using cold-FET and Yang-Long measurement, as well as direct extraction procedures, scaling rules for extrinsic components were established that allow accurate models over a broad frequency range. These models have been used to design ultrawide-band monolithic microwave integrated circuits (MMICs) up to 50 GHz

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IEEE Transactions on Microwave Theory and Techniques  (Volume:45 ,  Issue: 5 )