By Topic

Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Werner, R. ; Physikalisches Institut–Experimentalphysik II, Universität Tübingen, Auf der Morgenstelle 14, 72076 Tübingen, Germany ; Petrov, A.Yu. ; Mino, L.Alvarez ; Kleiner, R.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3581885 

We report resistance versus magnetic field measurements for a La0.65Sr0.35MnO3/SrTiO3/La0.65Sr0.35MnO3 tunnel junction grown by molecular-beam epitaxy, that show a large field window of extremely high tunneling magnetoresistance (TMR) at low temperature. Scanning the in-plane applied field orientation through 360°, the TMR shows fourfold symmetry, i.e., biaxial anisotropy, aligned with the crystalline axis but not the junction geometrical long axis. The TMR reaches ∼1900% at 4 K, corresponding to an interfacial spin polarization of >95% assuming identical interfaces. These results show that uniaxial anisotropy is not necessary for large TMR, and lay the groundwork for future improvements in TMR in manganite junctions.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 16 )