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Barrier height enhancement of InP-based n-Ga0.47In0.53As Schottky-barrier diodes grown by molecular beam epitaxy

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3 Author(s)
Kim, J.H. ; Jet Propulsion Lab., Pasadena, CA, USA ; Li, S.S. ; Figueroa, L.

Barrier height enhancement of an InP-based p+ n-Ga0.47In0.53As Schottky diode grown by MBE has been demonstrated for infrared photodetector applications. A barrier height of 0.35 eV for n-Ga0.47In0.53 As Schottky barrier diodes, was increased to the effective barrier height of 0.55 eV, with a p+-Ga0.47In0.53As surface layer of 30 nm thick. The results show a reverse leakage current density of 1.5×10-3 A/cm2 and a junction capacitance of 0.3 pF, which are comparable to those of p-Ga0.47In0.53As Schottky-barrier diodes at a reverse bias voltage of 5 V

Published in:

Electronics Letters  (Volume:24 ,  Issue: 11 )