Close category search window
 

Anomalous optical processes in photoluminescence from ultrasmall quantum dots of ZnO

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Kukreja, L.M. ; Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, P. O. RRCAT, Indore 452 013, India ; Misra, P. ; Das, A.K. ; Sartor, J.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.3578344 

Ensembles of alumina capped ZnO quantum dots (ZQDs) were grown using pulsed laser deposition. The ZQDs of mean radii comparable to and smaller than the pertinent excitonic Bohr radius (∼2.34 nm), called ultrasmall quantum dots, show size dependent optical absorption edges, which follow the strong confinement model. In this model the confinement energy and Coulombic interaction energy of the localized electron-hole pairs are significantly higher than their correlation energy and the optical transitions are perceived to be nonexcitonic in nature. In photoluminescence (PL) spectra of such ZQDs of mean radius of ∼2.3 nm at temperatures of 6 K and above, the primary recombinations are found to be due to the surface bound and Al donor bound electron-hole pairs. The band-edge recombination peak of the PL spectra appeared at about 70 K and above, which was found to be about 166 meV Stoke and/or thermally redshifted with respect to the experimentally observed absorption edge. Almost all of the PL spectra at different temperatures conspicuously showed the LO and 2LO phonon replicas of the primary transitions, suggesting strong coupling between the recombining charge carriers and the LO phonon, which is rather unusual for nonexcitonic recombinations. The temperature dependent PL peak positions followed the well known Varshni’s relation with fitting parameters close to that of the bulk ZnO. The peak intensity of the observed PL transitions followed the normal law of thermal quenching which could be fitted with the Arrhenius equation having activation energy of about 10 meV. Temperature dependence of full width at half maximum of the PL peaks when fitted with the Hellmann and O’Neill models did not result in a close match. However, from this fit one could estimate a value of the carrier-LO phonon coupling coefficient of ∼980 meV, which is higher than that reported earlier for the ZQDs. These observations are hitherto unfamiliar and expected to provide further insight into the basic optical processes in alumina capped ultrasmall ZQDs.

Published in:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:29 ,  Issue: 3 )

Date of Publication: May 2011

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.