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Wide temperature range compact modeling of SiGe HBTs for space applications

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10 Author(s)
Lan Luo ; ECE Dept., Auburn Univ., Auburn, AL, USA ; Ziyan Xu ; Guofu Niu ; Chakraborty, P.S.
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We present here wide temperature range compact modeling of Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) based on Most EXquisite TRAnsistor Model (Mextram). Various modifications and extensions are made to enable modeling of DC characteristics from 43-393 K, and AC characteristics from 93-393 K.

Published in:

System Theory (SSST), 2011 IEEE 43rd Southeastern Symposium on

Date of Conference:

14-16 March 2011

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