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Excellent crystalline silicon surface passivation by amorphous silicon irrespective of the technique used for chemical vapor deposition

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6 Author(s)
Schuttauf, Jan-Willem A. ; Debye Institute for Nanomaterials Science, Nanophotonics–Physics of Devices, Utrecht University, Princetonplein 5, 3584 CC Utrecht, The Netherlands ; van der Werf, Karine H.M. ; Kielen, Inge M. ; van Sark, W.G.J.H.M.
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Crystalline silicon surface passivation by amorphous silicon deposited by three different chemical vapor deposition (CVD) techniques at low (T∼130 °C) temperatures is compared. For all three techniques, surface recombination velocities (SRVs) are reduced by two orders of magnitude after prolonged thermal annealing at 200 °C. This reduction correlates with a decreased dangling bond density at the amorphous-crystalline interface, indicating that dangling bond saturation is the predominant mechanism. All three deposition methods yield excellent surface passivation. For a-Si:H layers deposited by radio frequency plasma enhanced CVD, we obtain outstanding carrier lifetimes of 10.3 ms, corresponding to SRVs below 1.32 cm/s.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 15 )

Date of Publication:

Apr 2011

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