By Topic

Electrolyte-gated organic field-effect transistors for sensing applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Buth, F. ; Walter Schottky Institut, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany ; Kumar, D. ; Stutzmann, M. ; Garrido, J.A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3581882 

We report on the electrolytic gating of α-sexithiophene thin film transistors, in which the organic semiconductor is in direct contact with an electrolyte. Due to the large capacitance of the electrical double layer at the electrolyte/semiconductor interface, modulation of the channel conductivity via an electrical field effect is achieved at low voltages. The transistors are stable for several hours and are sensitive to variations in the pH resulting from a pH-dependent surface charge, which modulates the threshold voltage. The response to different ion concentrations is described by the influence of the ions on the mobility and an electrostatic screening effect.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 15 )