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Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor

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5 Author(s)
Liu, Z.H. ; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 ; Ng, G.I. ; Arulkumaran, S. ; Maung, Y.K.T.
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The mechanisms of the temperature-dependent forward gate current transport in the atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MISHEMT) were investigated. In contrast to the conventional Schottky-gate AlGaN/GaN HEMT, thermionic field emission was found not to be the dominant transport mechanism for the Al2O3/AlGaN/GaN MISHEMT. Fowler–Nordheim tunneling was found to be dominant at low temperature (T<0 °C) and high electrical filed, whereas trap assistant tunneling was found to be dominant at medium electrical field and high temperature (T>0 °C).

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 16 )

Date of Publication:

Apr 2011

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