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Low-resistance Ni/Al Ohmic contacts applied to a nonpolar a-plane n-type GaN

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5 Author(s)
Dong Ho Kim ; School of Electronics and Electrical Engineering, Korea University, Seoul 136-701, Republic of Korea ; Su Jin Kim ; Yu Jeong Seo ; Geun Kim, Tae
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The authors report upon a low-resistance Ni/Al Ohmic contact to a nonpolar n-type a-plane GaN with respect to the annealing temperature. The Schottky behavior of the Ni/Al contact changes to a linear Ohmic behavior at a 700 °C annealing, at which the specific contact resistivity of the Ni/Al contact became as low as 5.8×10-5 whereas that of a typical Ti/Al contact was 1.6×10-3 Ω cm2. This improvement is attributed to a lowering of the Schottky barrier height via a Ni–Al interdiffused layer, formed at the interface between the metal and the nonpolar a-plane n-type GaN during the annealing process.

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Applied Physics Letters  (Volume:98 ,  Issue: 16 )