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Comparison is made between memristor linear, nonlinear drift models with Hewlett Packard (HP) experimental data using MATLAB mathematical model analysis. Average power predictions indicated that the experiment with 0.58mW and linear model with 0.86mW showed better agreement in comparison to nonlinear model with 1.17mW. Instantaneous power profile comparisons between both linear and nonlinear models with experimental data indicate that further modeling efforts are needed to capture details in instantaneous power profile for experimental data. Average power model-based predictions are nominally on the same order as the physical device.