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Incremental Enhancement of SEU Hardened 90 nm CMOS Memory Cell

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10 Author(s)
Haddad, N.F. ; BAE Syst., Inc., Manassas, VA, USA ; Kelly, A.T. ; Lawrence, R.K. ; Bin Li
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SEU enhancements were introduced into a radiation hardened 90 nm CMOS technology to achieve upset immunity. An incremental enhancement approach that enables various SEU/performance trade-off was demonstrated on the same basic SRAM cell to achieve various degrees of hardness, by the selective utilization of enhancement features. Single event upset testing, as well as MRED simulation, have demonstrated a significant enhancements achieved with a minimal performance penalty.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:58 ,  Issue: 3 )

Date of Publication:

June 2011

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