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Evidence of a Novel Source of Random Telegraph Signal in CMOS Image Sensors

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5 Author(s)
V. Goiffon ; Université de Toulouse, ISAE, Toulouse, France ; P. Magnan ; P. Martin-Gonthier ; C. Virmontois
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This letter reports a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley-Read-Hall generation mechanism at oxide interfaces. The role of oxide defects is discriminated thanks to the use of ionizing radiations. A dedicated RTS detection technique and several test conditions (radiation dose, temperature, integration time, photodiode bias) reveal the particularities of this novel source of RTS.

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IEEE Electron Device Letters  (Volume:32 ,  Issue: 6 )