By Topic

Modeling of {311} facets using a lattice kinetic Monte Carlo three-dimensional model for selective epitaxial growth of silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
2 Author(s)
Martin-Bragado, Ignacio ; IMDEA Materials Institute, Calle Profesor Aranguren s/n., 28040 Madrid, Spain ; Moroz, V.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Using lattice kinetic Monte Carlo, we provide a quantitative physically based atomistic model for the selective grown of Si-based materials, and explain {311} facet formation while remaining computationally efficient. Descriptions of the local atomistic configurations critical for the developing of {100}, {110}, {111}, and {311} facets are given. The model also introduces (a) three different microscopic growth rates for local {100} planes, needed to properly simulate the formation of perfect {100} terraces in miscut substrates and (b) a break-up energy to account for bonding during {311} facet formation. The model has been verified against experimental results.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 15 )