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Using lattice kinetic Monte Carlo, we provide a quantitative physically based atomistic model for the selective grown of Si-based materials, and explain {311} facet formation while remaining computationally efficient. Descriptions of the local atomistic configurations critical for the developing of {100}, {110}, {111}, and {311} facets are given. The model also introduces (a) three different microscopic growth rates for local {100} planes, needed to properly simulate the formation of perfect {100} terraces in miscut substrates and (b) a break-up energy to account for bonding during {311} facet formation. The model has been verified against experimental results.
Published in:
Applied Physics Letters
(Volume:98
,
Issue:
15
)
Date of Publication: Apr 2011
- Page(s):
- 153111 - 153111-3
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.3580771
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 19 April 2011
- Issue Date :
- Apr 2011
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