High-Power 1.48- m Wafer-Fused Optically Pumped Semiconductor Disk Laser

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An output power up to 5 W at 1.48-μm wavelength is achieved from an optically pumped semiconductor disk laser. An active region composed of an AlGaInAs/InP heterostructure grown on an InP substrate was wafer fused with an AlGaAs/GaAs Bragg reflector grown on a GaAs substrate. An intracavity diamond heatspreader bonded to the gain structure surface provides efficient heat removal from the active element. The results further validate that the wafer fusion technique offers a flexible platform for high-power disk lasers in a wide wavelength range.

Published in:
Photonics Technology Letters, IEEE (Volume:23 , Issue: 13 )

Date of Publication: July1, 2011

Page(s):: 917 - 919
ISSN :: 1041-1135
INSPEC Accession Number:: 12046378
Digital Object Identifier :: 10.1109/LPT.2011.2143399
Product Type:: Journals & Magazines

Date of Publication :: 19 April 2011
Date of Current Version :: 13 June 2011
Issue Date :: July1, 2011
Sponsored by :: IEEE Photonics Society

Author(s)

Lyytikainen, J.
Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere, Finland
Rautiainen, J. ; Sirbu, A. ; Iakovlev, V. ; Laakso, A. ; Ranta, S. ; Tavast, M. ; Kapon, E. ; Okhotnikov, O.G.