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High-Power 1.48- \mu m Wafer-Fused Optically Pumped Semiconductor Disk Laser

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9 Author(s)
Lyytikainen, J. ; Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere, Finland ; Rautiainen, J. ; Sirbu, A. ; Iakovlev, V.
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An output power up to 5 W at 1.48-μm wavelength is achieved from an optically pumped semiconductor disk laser. An active region composed of an AlGaInAs/InP heterostructure grown on an InP substrate was wafer fused with an AlGaAs/GaAs Bragg reflector grown on a GaAs substrate. An intracavity diamond heatspreader bonded to the gain structure surface provides efficient heat removal from the active element. The results further validate that the wafer fusion technique offers a flexible platform for high-power disk lasers in a wide wavelength range.

Published in:

Photonics Technology Letters, IEEE  (Volume:23 ,  Issue: 13 )