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Post-bond sub-500 nm alignment in 300 mm integrated face-to-face wafer-to-wafer Cu-Cu thermocompression, Si-Si fusion and oxideoxide fusion bonding

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7 Author(s)
W. H. Teh ; SEMATECH (Intel Assignee), 3D Interconnect, 257 Fuller Road, Albany, NY 12203 ; C. Deeb ; J. Burggraf ; D. Arazi
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We report recent advances in tool and process hardening of a first of its kind 300 mm wafer-to-wafer (WtW) preprocessing, aligning, and bonding integrated tool. We have demonstrated sub-500 nm post-bond alignment accuracies for 300 mm WtW face-to-face (FtF) Cu-Cu thermocompression bonds, WtW FtF Si-Si fusion bonds, and WtW FtF oxideoxide fusion bonds. All process of record (POR) recipes that were developed had undetectable voids based on scanning acoustic microscope (C-SAM) measurements on representative bonded Cu, oxide, and Si blanket wafers. Optimized bonded patterned wafer splits in the Cu-Cu WtW thermocompression bonding step have shown alignment accuracies down to ~190 nm, the highest accuracy to date. Using an infrared-enabled, high speed focused ion beam (FIB) system (with XeF2) with a CAD overlay function to assist in selective sample preparation, we have verified that the bonding interfaces at the via chain structures with 1-5 μm diameter vias show no interfacial voids. Also, there is evidence of Cu interdiffusion, as supported by transmission electron microscopy (TEM) and electron backscattering diffraction (EBSD) data.

Published in:

3D Systems Integration Conference (3DIC), 2010 IEEE International

Date of Conference:

16-18 Nov. 2010