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Ultra Thin silicon substrate for next generation technology nodes

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13 Author(s)

Ultra Thin Body Devices are a way to solve technical challenges requested by advanced digital technology nodes. Combined with planar CMOS approach, they lead to the need for Ultra-Thin SOI (UTSOI) wafers. These 300 mm ultra-thin SOI layer are now available with silicon target thickness at 12 nm, controlled within a few angström range from Wafer to Wafer to Transistor level.Ultra-Thin SOI & BOX (UTBOX) substrates with 25 to 10 nm BOX are developed in parallel to UTSOI and will show similar SOI layer uniformity.

Published in:

Semiconductor Manufacturing (ISSM), 2010 International Symposium on

Date of Conference:

18-20 Oct. 2010