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Effect of Patterned Sapphire Substrate Shape on Light Output Power of GaN-Based LEDs

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6 Author(s)
Xiao-Hui Huang ; Department of nano device, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou, P.R. China ; Jian-Ping Liu ; Ya-Ying Fan ; Jun-Jie Kong
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An optical simulation including reflection and refraction is used to simulate the light illumination intensity of gallium nitride (GaN)-based light-emitting diodes (LEDs) on varied patterned sapphire substrates (PSS) with different slanted angles and fill factors (f ). It is found that a micro pyramid array with a slanted angle from 25° to 60° is able to effectively improve illumination intensity which reaches to summit as the slanted angle is around 33°. And illumination intensity enhances monotonously as f increases. In addition to the mentioned work, epitaxial growth of GaN-LEDs on PSS is investigated for comparison. The output power of GaN-LEDs on PSS increases with simulated light illumination intensity increasing. The experimental results prove the simulation.

Published in:

IEEE Photonics Technology Letters  (Volume:23 ,  Issue: 14 )