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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:32 Issue:5 Help

A New Model for Two-Dimensional Electrical-Field-Dependent V_{\rm th} Instability of pMOSFETs With Ultrathin DPN Gate Dielectrics

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8 Author(s)
Jiaqi Yang ; Inst. of Microelectron., Peking Univ., Beijing, China ; Jingfeng Yang ; Liu, X.Y. ; Han, R.Q.
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The 2-D electrical-field-dependent hot-hole-related negative-bias temperature instability (HH-NBTI) behaviors of pMOSFETs with 1.7-nm decoupled-plasma-nitridation oxynitride dielectrics are investigated. The lateral-channel electric-field-induced turnaround HH-NBTI degradation that is associated with the enhanced breaking effect of the interfacial Si-H bonds at the Si interface is demonstrated. For the first time, the lateral-electric-field-dependent activation energy of ≡ Si- H bond dissociation is presented. A new model taking into account the 2-D electric field effects is proposed to depict the HH-NBTI behaviors related to the lateral- and vertical-channel electric fields. The proposed model is verified by the experimental data.

Published in:
Electron Device Letters, IEEE  (Volume:32 ,  Issue: 5 )

Date of Publication: May 2011

Page(s):
605 - 607
ISSN :
0741-3106
INSPEC Accession Number:
11961275
Digital Object Identifier :
10.1109/LED.2011.2119392
Product Type:
Journals & Magazines
Date of Publication :
15 April 2011
Date of Current Version :
25 April 2011
Issue Date :
May 2011
Sponsored by :
IEEE Electron Devices Society

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