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We report the effect of the drain-offset length on the performance of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). While the field-effect mobility decreases from ~ 40 to 10 cm2/V·s by increasing the drain-offset length from 0 to 5 μm, the threshold voltage (Vth) and swing (S) remain relatively independent of the offset length variation. Because of its high mobility even for large (5 μm ) offset lengths, the drain-offset a-IGZO TFT can be used to eliminate the kickback voltage in active-matrix displays.
Date of Publication: May 2011