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We report the realization of 0.3-μm emitter InP/GaAsSb/InP DHBTs with cutoff frequencies fT = 365 GHz and fMAX = 501 GHz. Our devices were implemented with a 15-nm C-doped graded base and a 125-nm InP collector and feature a peak current gain β = 35, with a base sheet resistance RSH = 1160 Ω/sq. The present transistors are the first InP/GaAsSb DHBTs to feature fMAX = 500 GHz, according to three extraction schemes. The present transistor performance is limited by an undepleted collector layer associated with a doping tail extending from the subcollector.