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InP/GaAsSb DHBTs With 500-GHz Maximum Oscillation Frequency

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7 Author(s)
Lovblom, R. ; Millimeter-Wave Electron. Group, ETH-Zurich, Zürich, Switzerland ; Fluckiger, R. ; Yuping Zeng ; Ostinelli, O.
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We report the realization of 0.3-μm emitter InP/GaAsSb/InP DHBTs with cutoff frequencies fT = 365 GHz and fMAX = 501 GHz. Our devices were implemented with a 15-nm C-doped graded base and a 125-nm InP collector and feature a peak current gain β = 35, with a base sheet resistance RSH = 1160 Ω/sq. The present transistors are the first InP/GaAsSb DHBTs to feature fMAX = 500 GHz, according to three extraction schemes. The present transistor performance is limited by an undepleted collector layer associated with a doping tail extending from the subcollector.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 5 )