Thin films of germanium selenide (GexSe100-x with 0<x<57) were deposited on different substrates by hot wire metalorganic chemical vapor deposition using tetraallylgermanium and di-tert-butylselenide. The growth kinetics of the deposition process as well as the properties of the films were investigated. The growth rate was found to decrease with increasing temperature and decreasing pressure. The conformal step coverage was demonstrated. Germanium selenide films covered and subsequently diffused by silver were used as programmable metallization cells for a verification of the electrical switching properties.