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Growth and optical properties of InP nanowires formed by Au-assisted metalorganic chemical vapor deposition: Effect of growth temperature

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9 Author(s)
Jingwei Guo ; Key Laboratory of Information Photonics and Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China ; Hui Huang ; Xiaomin Ren ; Xin Yan
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.3573985 

Vertical indium phosphide nanowires (NWs) were grown at different temperatures by metalorganic chemical vapor deposition via a gold (Au)-assisted vapor-liquid-solid mechanism. At a low growth temperature (420 °C), the lengths of the NWs were diameter independent, which indicated that the NWs were grown with significant contributions from the direct impingement of the precursors onto the alloy droplets. In this process, the droplet acts as a catalyst rather than an adatom collector. However, at a high growth temperature (480 °C), the lengths of the NWs were inversely diameter dependent. The wurtzite percentage of NWs increases with the growth temperature. Room temperature photoluminescence properties of NWs grown under different temperatures were investigated.

Published in:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:29 ,  Issue: 3 )

Date of Publication: May 2011

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