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Improved light-emitting diode performance by conformal overgrowth of multiple quantum wells and fully coalesced p-type GaN on GaN nanowires

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6 Author(s)
Frajtag, P. ; Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695, USA ; Hosalli, A.M. ; Bradshaw, G.K. ; Nepal, N.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3572032 

We demonstrate a light-emitting diode (LED) structure with multiple quantum wells (MQWs) conformally grown on semipolar and nonpolar plane facets of n-GaN nanowires (NWs), followed by deposition of fully coalesced p-GaN on these nanowires. Overgrowth on the nanowires’ tips results in inclusion of high density voids, about one micron in height, in the GaN film. The light output intensity of NWs LEDs is more than three times higher than corresponding c-plane LEDs grown simultaneously. We believe this results from a reduced defect density, increased effective area of conformally grown MQWs, absence of polar plane orientation, and improved light extraction.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 14 )

Date of Publication:

Apr 2011

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