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Development of the S-band high power klystron with bandwidth of 12%

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4 Author(s)
Yong Wang ; Key Laboratory of High Power Microwave Sources and Technologies, Institute of Electronics, Chinese Academy of Sciences, Beijing-100190, China ; Jian Zhang ; Ying Wang ; Zhi-qiang Zhang

The development of broadband high power klystron has being done in the Institute of Electronics, Chinese Academy of Sciences (IECAS), and the breakthrough of the bandwidth of klystron has been obtained continuously. In S-band, after the achievement of 10% and 11% bandwidth, the relative instantaneous bandwidth of 12% has been brought to success in 2009. The paper introduces the design, simulation and test results of this klystron in detail.

Published in:

Vacuum Electronics Conference (IVEC), 2011 IEEE International

Date of Conference:

21-24 Feb. 2011