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Improved Performance of an InGaN-Based Light-Emitting Diode With a p-GaN/n-GaN Barrier Junction

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6 Author(s)
Yi-Jung Liu ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Chien-Chang Huang ; Tai-You Chen ; Chi-Shiang Hsu
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An InGaN-based light-emitting diode with a p-GaN/n-GaN barrier junction is fabricated and investigated. Due to the built-in potential induced by this junction, superior current spreading performance is achieved. In addition, the suppression of the current-crowding phenomenon yields a reduced parasitic effect. Therefore, under an injection current of 20 mA, improved behaviors, including lower turn-on voltage, lower parasitic series resistance, and reduced p-n junction temperature, are achieved. In addition, due to the improved current-spreading ability, longer life-time, driving at medium current injection (60 mA), as well as significantly enhanced electrostatic discharge performance, are obtained.

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Quantum Electronics, IEEE Journal of  (Volume:47 ,  Issue: 6 )